我国平板网架结构的发展现状

本文总结论述了我国迅速发展的平板网架结构,并详细对结构的形式、连接方法、计算分析、施工与质裣、以及屋面材料、支座形式和防火、防锈涂料等方面发展状况进行了评述,最后还列示了有代表性的几十个典型工程实例。     

大口径非球面系统的共基准加工与检验

针对大口径离轴非球面系统加工与装调的难点,提出了非球面光学系统共基准加工与检测的方法,对该方法的基本原理和实现过程进行了分析和研究。当光学系统的主镜和第三镜面形的RMS值优于λ/10(λ=632.8nm)时,对主镜和第三镜进行共基准装调和测试,并进行背板一体化装嵌,然后利用离子束对其进行一体化共基准加工。结合工程实例,对一大口径非球面系统口径为724mm×247mm的非球面主镜和口径为632mm×205mm的第三镜进行了共基准加工与检测,最终利用离子束共基准一体化精抛光得到主镜和第三镜面形的RMS值分别为0.019λ和0.017λ,满足光学成像。     

基于迁移学习与深度森林的晶圆图缺陷识别

为了有效识别晶圆图缺陷模式并及时诊断制造过程的故障源,提出基于迁移学习和深度森林集成的DenseNet-GCForest晶圆图缺陷模式识别模型. 为了解决深度学习模型训练困难和晶圆图缺陷类型数目不平衡的问题,利用迁移学习将深度卷积神经网络DenseNet在ImageNet上预训练的网络权重参数迁移至本模型并重新设计分类层,以减少深度网络模型的训练时间并提高模型的特征提取能力;基于DenseNet网络提取的高维抽象晶圆图特征,引入深度森林模型进行晶圆图特征缺陷模式识别. 工业案例的实验验证结果表明,该方法的识别准确率达到了96.8%,并提高了识别效率,其性能优于典型的卷积神经网络以及其他常用识别方法.     

单砝码配重法在调节硅片研磨均匀性上的应用研究

为提高硅片研磨的均匀性,提出了一种通过改变调节砝码位置的新方法。对单砝码配重法的原理、步骤及物理模型进行了详细的论述,并基于LabVIEW软件对该方法进行了可视化。在精密研磨抛光机上进行实验,并用膜厚仪进行均匀性测量。结果表明:在给定的条件下使9.9 cm硅片的均匀性从单靠自重研磨的20μm提高到用配重法调节后的3μm,显著提高了硅片研磨的均匀性。单砝码配重法为解决硅片研磨均匀性问题提供了一种既精确又简便的方法。     

磁性磨料制备技术研究新进展

磁粒研磨光整加工是一种很优异的光整加工方法,磁性磨料制备是该技术发展和广泛应用的关键。从磁性磨料制备技术及工艺方面综述了近几年来的最新研究进展,并对所述的制备方法进行评价。针对磁性磨料制备技术的特点,指出雾化快凝制备球形复合磁性磨料是一种有希望大规模工业化生产的有效方法。     

手机面板用蓝宝石玻璃性质与制备

蓝宝石具有硬度高、耐磨性、化学稳定性和耐热性好等特点,手机制造企业将蓝宝石用于代替玻璃作手机面板的覆盖材料。本文阐述了蓝宝石的结构、性质和大尺寸蓝宝石的制造方法,指出热交換法可以制备Φ380 mm的蓝宝石,冷心放肩微量提拉法(SAPMAC)也是一种有特色的制备方法。最后提出由蓝宝石和玻璃组成叠层材料,上层用耐磨的蓝宝石,下层为玻璃,可以节约成本,这将是手机面板发展的方向。     

Laser Zone Melting and microstructure of waveguide coatings obtained on soda-lime glass

This study presents a Laser Zone Melting method with potential for producing planar waveguides at large scale, based on the surface coupling of two chemically compatible glass layers which exhibit distinct indices of refraction. The method is based on a recent patent, particularly applicable to process glass and ceramics with low thermal shock resistance. Glass coatings containing 76.24% by weight PbO are thus here reported, as obtained by this method on commercial soda-lime planar glass substrates. Their higher indices of refraction (1.58 vs 1.52 for commercial soda-lime glass) result in attractive waveguiding potential, as demonstrated with measurements using focused light from a He-Ne laser beam. Scanning and transmission electron microscopy studies reveal excellent integration and compatibility between the observed coatings and substrates, where diffusion in the proximity of the interface was studied by EDS analysis. Crystalline phases have not been found within the coating, or within the substrate, as concluded from the absence of Bragg-peaks in XRD experiments.     

Short fiber-reinforced oxide fiber composites

This paper presents a novel fiber spraying process for the manufacturing of short fiber bundle-reinforced Nextel™ 610/Al₂O₃-ZrO₂ oxide fiber composites (SF-OFC) and its characterization. First, the influence of varying fiber lengths (7, 14, and 28 mm, continuous fibers) and fiber orientations (unidirectional 0°, quasi-isotropic, ±45°) was investigated using hand-laid SF-OFC. Due to the weak matrix, the hand-laid material exhibited a strongly fiber-dominated material behavior, that is, variations in fiber length and orientation had a strong influence on the material properties. Second, the automated sprayed SF-OFC, however, exhibited a random orientation of the fiber bundles, which resulted in in-plane isotropic material properties. Average bending strengths of up to 177 MPa, strains of .39%, and a quasi-ductile fracture behavior were achieved. The strain was, therefore, in the range of fabric-reinforced OFC. While the bending strength of the SF-OFC was somewhat lower than that of fabric-reinforced OFC with the fiber orientation parallel to the loading direction, it was more than two times higher than the strength in 45° direction relative to the fabric reinforcement. Combined with good drapability and lower material costs compared to fabric-reinforced OFC, SF-OFC is, therefore, a promising material for industrial applications.     

Improved additive manufacturing of silicon carbide parts via pressureless electric field-assisted sintering

High solids loading silicon carbide (SiC)-based aqueous slurries containing only .5 wt. % organic additives were utilized to create specimens of various geometries via an extrusion-based additive manufacturing (AM) technique. Pressureless electric field-assisted sintering was performed to densify each specimen without deformation. The combination of these techniques produced parts with >98% relative density despite containing only 5 wt.% oxide sintering additives. After sintering, specimens contained only the α-SiC and yttrium aluminum perovskite phases. This suggests the evolution of a nonequilibrium yttrium aluminate phase, as well as transformation from β-SiC to α-SiC. The fabrication method presented in this work has advantages over other AM techniques commonly used with SiC, because it does not require significant organic additives nor additional postprocessing steps such as chemical vapor infiltration or polymer impregnation and pyrolysis.     

Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm²/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm²/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing.